unisonic technologies co., ltd bd136-138-140 pnp epitaxial si licon transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r204-013.ca pnp silicon transistor ? description the utc bd136/bd138/bd140 are silicon epitaxial planer pnp transistor, designed for use as audi o amplifiers and drivers utilizing complementary or quasi complementary circuits. the complementary npn types are the bd135/bd137/ bd139. 1 to-251 to-126 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 bd136l-x-t60-k bd136g-x-t60-k to-126 e c b bulk bd138l-x-t60-k bd138g-x-t60-k to-126 e c b bulk bd140l-x-t60-k bd140g-x-t60-k to-126 e c b bulk bd136l-x-tm3-t bd136g-x-tm3-t to-251 b c e tube bd138l-x-tm3-t bd138g-x-tm3-t to-251 b c e tube bd140l-x-tm3-t bd140g-x-tm3-t to-251 b c e tube note: pin assignment: e: emi tter c: collector b: base
bd136-138-140 pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r204-013.ca ? absolute maximum rating parameter symbol ratings unit collector-base voltage bd136 v cbo -45 v bd138 -60 bd140 -80 collector-emitter voltage bd136 v ceo -45 v bd138 -60 bd140 -80 emitter-base voltage v ebo -5 v collector current i c -1.5 v collector peak current i cm -3 a base current i b -0.5 a power dissipation t c Q 25 to-126 p d 12.5 w to-251 15 junction temperature t j 150 storage temperature t stg -40 ~ +150 note 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. the device is guaranteed to meet performance specification within 0 ~70 operating temperature range and assured by design from ?20 ~85 . ? thermal data parameter symbol ratings unit junction to ambient to-126 ja 100 /w to-251 83 junction to case to-126 jc 10 /w to-251 8.3 ? electrical characteristics (t c =25 ,unless otherwise specified) parameter symbol test conditions min typ max unit collector-emitter sustaining voltage bd136 v ceo(sus) i c =-30ma, i b =0 (note) -45 v bd138 -60 bd140 -80 collector cut-off current i cbo v cb =-30 v, i e =0 -0.1 a v cb =-30 v, i e =0, t c = 125 c -10 emitter cut- off current i ebo v eb = -5 v, i c =0 -10 a dc current gain h fe1 v ce =-2v, i c =-5ma, 25 h fe2 v ce =-2v, i c =-0.5a 25 h fe3 v ce =-2v, i c =-150ma 40 250 collector-emitter satu ration voltage v ce ( sat ) i c =-0.5a, i b = -0.05a (note) -0.5 v base-emitter voltage v be i c =-0.5a, v ce =-2 v (note) -1 v note: pulsed: pulse duration 300 s, duty cycle 1.5 % Q ? classification of h fe 3 rank 6 10 16 range 40~100 63~160 100~250
bd136-138-140 pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r204-013.ca utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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